| 摘要 |
<p>PURPOSE:To prevent short-circuit between the emitter and the collector, by providing an emitter region of a memory cell in contact with an oxide film, in a semiconductor storage device assembled with a memory of junction destruction type. CONSTITUTION:A sufficiently deep P type base region 311 is provided with an N type silicon epitaxial layer 231, a memory cell of a construction provided with N<+> emitter region 341 in contact with a field oxide film 251 at the surrounding is provided on the same base region 311, a shallow P type base region 312 is provided on an N type silicon epitaxial layer 232, and a peripheral circuit having the construction that an N<+> type emitter region 342 the surrounding of which is not in contact with a field oxide film 252 is provided in the region 312. Thus, desired dielectric strength can be given to the memory cell and the emitter to collector dielectric strength of transistors in the peripheral circuit, and the short- circuit between the emitter and the collector can be prevented at write-in.</p> |
