发明名称 DIFFUSING METHOD FOR IMPURITY FOR SEMICONDUCTOR
摘要 PURPOSE:To uniformly diffuse impurity to a semiconductor wafer by containing the wafer and a vacant crucible in a container body and filling impurity diffusion source in the crucible through ahole tube provided in advance. CONSTITUTION:A semiconductor wafer 5 is inserted into a vertical boat 3 from an inlet A side, crucibles 41, 42 are disposed directly under fine tubes 71, 72, and the inlet A of the container and a quartz cap 2 are sealed. Then, conduits 81, 82 are respectively inserted into the tubes 71, 72, impurity sources 61, 62 are charged from above in suitable amounts, and the conduits 81, 82 are then removed. One tube 71 is sealed, and then the other tube 72 is sealed in a short time. Accordingly, the temperatures in the tubes are hardly raised, and a plurality of wafers being sealed in the container are not irregularly diffused in this manner.
申请公布号 JPS57139920(A) 申请公布日期 1982.08.30
申请号 JP19810026368 申请日期 1981.02.25
申请人 TOKYO SHIBAURA DENKI KK 发明人 TSUKAGOSHI TSUNEO;YAMAGUCHI YOSHIHIRO
分类号 H01L21/223;H01L21/00;(IPC1-7):01L21/22 主分类号 H01L21/223
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