| 摘要 |
PURPOSE:To form a minute conductor layer with high performance by coating the first insulating layer selectively shaped onto a substrate with the second insulating layer so that the side surface is at a right angle and forming the conductor layer having approximately equal height to the side surface of the second insulating layer in a self-matching shape. CONSTITUTION:The Si substrate 101 is coated with the SiO2 film 103 while removing openings 102a-102c. The SiO2 film 103 is coated with the silicon nitride film 104 so that the side surface is at a right angle to the substrate. The whole surface is coated with Al105. The Al105 is etched, and a pattern in which Al adheres on at least one side surfaces of the silicon nitride film 104 is formed in a self-matching shape. The pattern of the Al105 is separated, and electrode wiring is obtained. The height of the film layer of the silicon nitride film 104 and height after forming the pattern of the Al105 are equalized approximately. Accordingly, the minute conductor pattern is shaped. |
