发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To increase adhesive strength, and to improve reliability by coating a substrate, to which an electrode and a protective film are formed, with a barrier metal layer and the second protective film, exposing a bump forming region, shaping a bump and removing the unnecessary barrier metal layer. CONSTITUTION:The substrate 1, to which the Al electrode 2 and the PSG protective film 3 are formed, is coated with the barrier metal layer such as Cr4 and Au 5, and the Au is coated with the second protective film SiO2 101. The SiO2 film 101 is removed excepting the bump forming region and the peripheral section. The bump forming region 7 is exposed, and the Au bump 8 is shaped. The Au and Cr of the remaining barrier metal layer are removed. Accordingly, the lowering of the adhesive strength of a bump electrode due to resist residue is prevented, the generation of the crack of the protective films is inhibited, and reliability is improved.
申请公布号 JPS57139942(A) 申请公布日期 1982.08.30
申请号 JP19810025106 申请日期 1981.02.23
申请人 DAINI SEIKOSHA KK 发明人 KUHARA KENTAROU
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址