INTERGRANULAR INSULATION TYPE SEMICONDUCTOR CERAMIC

摘要

There is disclosed a semiconductor ceramic of grain boundary insulation type comprising a polycrystalline substance. Each of grains (2) constituting said polycrystalline substance comprises a semiconductive oxide main phase (3) and a dielectric oxide composite phase (4) surrounding said main phase (3) and composed of a component of said main phase (3) and a component other than that of said main phase (3).