| 摘要 |
PURPOSE:To increase the reliability of a memory device, by increasing the bias margin and pulse current margin, through the application of pulse current with pedestal to a conductor pattern of a transfer gate. CONSTITUTION:A ion implantation layer is formed on all the surfaces of a crystal plate except a plurality of consecutive disc pattern regions to a bubble crystal substrate and the pattern regions are referred to as a bubble transfer path. When a bubble rotating magnetic field HR of a major loop 6 goes to a direction D, the bubble is transferred to a position (a). When a pulse current is applied to a conductor pattern 8 and a bias magnetic field at a hairpin loop is locally weakened, the bubble is extended and moves to a position (b) of a minor loop 7. Next, accompanied with the rotation of the magnetic field HR, the bubble moves to positions (c) and (d) of the loop 7. This driving current is formed by adding a pedestal pulse current I2 to a main pulse current I1. |
