| 摘要 |
PURPOSE:To uniformly perform turn-on and turn-off operations in the operation region of the subject device by a method wherein, in the gate turn-off thyristor of self-extinguishing type, and among base regions, the base region to be located under an emitter layer is thinly formed, and the quantity of impurities is increased in this base layer. CONSTITUTION:An N type base layer 1 and a P type layer 4 are formed by lamination on a P type emitter layer 2, an N type emitter layer 3 is formed by diffusion in the center part of the layer 4, and a P<+> type layer 5 to be used for contact are provided on both sides of the layer 3. Then, an annode electrode 6 is coated allover the reverse side of the layer 2, and a cathode electrode 7 and a gate electrode 8 are installed on the layers 3 and 5 respectively. In this constitution, the section 41 on the layer 4 located under the layer 3 is formed thinner than the other sections, and also the density of impurities in this section is made higher than that of the section 42. Accordingly, the gate firing current of the operation region is extremely reduced in intensity, because there exists the section 4 having an excellent efficiency of electron injection from the layer 3, and the ON and OFF function is made uniform, thereby enabling to increase the di/dt withstand voltage. |
