| 摘要 |
PURPOSE:To increase the yield rate of the image pick up element by a method wherein a prescribed pattern is formed by providing a light conductive film and performing transparent electrode evaporation on the whole surface of a substrate without using a metal mask, an etching is then performed and also when performing the above procedures, the light curing resin which was used as a mask is left over and used when a curting work is performed as a protecting material. CONSTITUTION:The picture element section 12, consisting of an optical image sensing photo diode and a BBD element to be used for transfer, and the driving section 13, consisting of an MOS transistor and a CCD element, are formed on an Si substrate 11. Then, the light conducting film 17 such as ZnSeZn1-XCdXTe and the like and the transparent electrode 18 such as IN2O3 and the like are laminated and evaporated on the whole surface, a light curing resin pattern 19 having an excellent transparency is formed on the picture element part 12 alone, and a photo-resolving resin film 19' is covered on the pattern 19. Subsequently, the unnecessary part of the films 17 and 18 is removed by etching using the film 19' as a mask, a developing process is performed by irradiating a beam of light, the film 19' only is removed, and the substrate 11 is cut into the desired shape using the exposed film 19 as a protective film. |
