| 摘要 |
PURPOSE:To achieve wider phase margin for gates for transfer-in and out, by arranging a prescribed band shape conductor pattern bridged over bubble transfer paths having an arbitrary unevenness. CONSTITUTION:A major loop 11 is arranged vertically to one direction difficult for magnetization, and the center line of a minor loop 14 is orthogonal to the cusp 17 of the loop 11. A conductor pattern 21 having notches 25 and 26 is arranged between the loops 11 and 14. When bubbles written in the loop 14 move on a supertrack 12 and reaches the cusp 17, a pulse current flows to the pattern 21 and a local magnetic field blocking the movement of the bubbles is generated, and the bubbles reach the loop 14 with this magnetic field and a charged wall reaching just before the chip 16. At readout, a blocking local magnetic field is generated in the notch 26 and the bubbles move to the cusp 17 for readout with the charged wall on the loop 11 and the pulse current in the pattern 21. |
