| 摘要 |
PURPOSE:To obtain a flow type ion concentration sensitive element capable of measuring a liquid to be inspected continuously, by providing a through hole to a semiconductor substrate and forming a gate part providing an ion sensitive film to said through hole. CONSTITUTION:N<+> diffusion layers 22, 22' are formed on the front and rear sides of a P<-> silicon substrate 20 and are regarded as drain and source diffusion layers. A through hole 26 is then formed in the substrate 20 by the anisotropic etching. After the whole body is covered with an oxidized film 28 and a surface stabilizing film 30 made of silicon nitride successively, an ion sensitive film 32 is formed on the inside surface and its circumference of the hole 26 to form a gate domain on the inside surface of the hole 26. Each conductive body is vapor- deposited on the film 30 of the drain and source diffusion layers 22, 22' to form a drain electrode 34 and a source electrode 36. |
