PROCESS OF MANUFACTURING POLYSILICON STRUCTURES HAVING 1 MICRON DIMENSIONS ON SILICON SUBSTRATES COMPRISING INTEGRATED CIRCUITS USING PLASMA ETCHING,申请号EP19810108437-传众专利搜索

发明名称	PROCESS OF MANUFACTURING POLYSILICON STRUCTURES HAVING 1 MICRON DIMENSIONS ON SILICON SUBSTRATES COMPRISING INTEGRATED CIRCUITS USING PLASMA ETCHING
摘要
申请公布号	EP0057258(A3)	申请公布日期	1982.08.25
申请号	EP19810108437	申请日期	1981.10.16
申请人	SIEMENS AKTIENGESELLSCHAFT BERLIN UND MUNCHEN	发明人	BEINVOGL, WILLY, DR. RER. NAT.;HASLER, BARBARA
分类号	H01L21/302;C04B41/53;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/31;H01L21/30	主分类号	H01L21/302
代理机构		代理人
主权项
地址