发明名称 Voltage booster circuit
摘要 An MOS voltage boost circuit includes a first field-effect-transistor coupled between ground and an output node and a second, depletion type, field effect transistor coupled between the output node and a source of supply voltage (VDD). The first transistor is turned off by a disabling signal, and the second transistor is turned on by an enabling signal derived, in part, from the disabling signal. This produces a first voltage at the output node. A third field-effect-transistor is capacitively coupled between the output node and the enabling signal to boost the output voltage when the enabling signal terminates.
申请公布号 US4346310(A) 申请公布日期 1982.08.24
申请号 US19800148096 申请日期 1980.05.09
申请人 MOTOROLA, INC. 发明人 CARTER, ERNEST A.
分类号 H03K19/0185;H03K5/02;H03K17/06;H03K19/017;H03K19/094;(IPC1-7):H03K6/02 主分类号 H03K19/0185
代理机构 代理人
主权项
地址