| 摘要 |
<p>18.6.79 1 PHD.78-103 "": " Capacitance diode". A capacitance diode having an epitaxial layer of a first conductivity type provided on a substrate in which a doping profile is formed by controlled doping during the growth, and a surface zone of the second conductivity type which forms a p-n junction with the epitaxial layer. According to the invention the doping profile in the epitaxial layer varies according to the equation wherein x is the distance from the p-n junction in /um, xo is the width of the depletion zone in /um at a voltage-UD across the p-n junction, wherein UD is the diffusion voltage of the p-n junction, and k, n and .beta. are constants. As a result of this a very low frequency deviation is obtained which does not change sign.</p> |
