发明名称 SEMICONDUCTOR PRESSURE TRANSDUCER
摘要 <p>PURPOSE:To improve corrosion resistance by forming a corrosion resisting, protecting film on at least one part of the part contacting with the medium for the pressure to be measured. CONSTITUTION:Single crystal silicon is partially thinned and a diaphragm which responds to pressure is formed. A pressure sensitive element 1, which is formed in this way, is connected to a seat 2 comprising the same material with a solder. The seat 2 is bonded to a substrate 3 with the solder. A pressure introducing pipe 8 is brazed to the substrate 3. A lead pin 4 which is insulated from the substrate 3 by hermetic glass 6 is connected to the pressure sensitive element by a bonding wire 5. The solder bonded part is protected by the corrosion resisting, protecting film 9 such as phlorosilicon oil. Said phlolosilicon oil, which is used as the protecting film 9, is intimately wetted with the pressure sensitive element 1, the seat 2, metals, and the like; forms a thin, uniform film; and shows the satisfactory protecting effect over the broad temperature range.</p>
申请公布号 JPS57136132(A) 申请公布日期 1982.08.23
申请号 JP19810022363 申请日期 1981.02.18
申请人 NIPPON DENSO KK 发明人 MATSUDA NORIO;SUGIURA JIYUNJI;TSUTSUI TOORU
分类号 G01L9/04;G01L9/00;H01L29/84 主分类号 G01L9/04
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