发明名称 CORRECTING METHOD FOR DEFECTIVE MASK
摘要 PURPOSE:To facilitate work, and to enable the application to the mask of a minute pattern and rewashing by forming the surface of a glass substrate in a white pin hole to the surface, which refracts and reflection-diffuses incident beams, through working by a glass substrate etching liquid. CONSTITUTION:The photo-mask 11 with a white pin hole defective section 14 to incident beams 16 generated on the transparent glass substrate 12 is prepared, and the white pin hole defective section 14 of the photo-mask is contacted with the glass substrate etching liquid, thus forming the surface of the glass substrate of the defective section to a dull surface 15, on which the incident beams are refracted 18 or reflection-diffused 17, through working. Accordingly, correctiong work is made easy and accurate, and application to the mask with the minute pattern and rewashing are enabled.
申请公布号 JPS57136326(A) 申请公布日期 1982.08.23
申请号 JP19820004898 申请日期 1982.01.18
申请人 OKI DENKI KOGYO KK 发明人 OOTSUKA HIROSHI;SATOU MASANORI;WATANABE AKIRA
分类号 G03F1/84;H01L21/027 主分类号 G03F1/84
代理机构 代理人
主权项
地址
您可能感兴趣的专利