| 摘要 |
PURPOSE:To control a tapered angle freely while forming a tapered etching hole accurately in excellent reproducibility by shaping an insulating layer to be etched selectively in two layer structure containing an oxy nitride layer. CONSTITUTION:The insulating layer 9 to be etched selectively is shaped in the double structure, one between the two layers or both are formed by an oxy nitride, and the insulating layer is etched taperingly through a plasma etching method by utilizing the difference of etching with another. For example, the insulating layer 9 with two layer structure consisting of the first insulating layer 7 composed of an SiO2 layer through CVD and the second insulating layer 8 composed of an oxy nitride SixNyOz layer through plasma CVD is formed onto an Al layer 1 on a semiconductor wafer. The insulating layer 9 is etched selectively through the plasma etching method through an etching resisting mask 4 by a photo-resist patterned, and the tapered etching hole 6 with a shape shown in the figure is formed. |
