| 摘要 |
PURPOSE:To improve the selectivity of crystal growth, and to remove a mask after growth easily by selectively growing GaAs or GaAlAs in a Ga solution in a liquid-phase shape by using a Si3N4 film as the mask. CONSTITUTION:The Si3N4 film 8 is evaporated onto double-hetero structure 10 through a CVD method, etc., and formed as a mask pattern through photolithography technique and a plasma etching method. The wafer 10 is etched in a mesa shape while using the Si3N4 film 8 as the mask, and an AlGaAs layer 6 is selectively crystal-grown. The surface is treated with hot phosphoric acid having approximately 140 deg.C, and the Si3N4 film 8 is etched in plasma. Accordingly, the selectivity of the growth of the AlGaAs layer 6 is improved, and the mask 8 after crystal growth can easily be removed. |
