| 摘要 |
PURPOSE:To obtain a high-precision resist pattern free form swelling due to development in the exposed resist region, by adding an epoxy compound to a phenolic resin in a specified proportion range. CONSTITUTION:A compound containing an epoxy group, such as ''Dow Bisphenol A/Epichlorohydrine Resin '' as shown in No.2 in the table is added to a phenol resin, such as polyvinylphenol of wt. average molecular wt. 3,000, in an amount of 5-70wt% based on a resist composition solution in order to sensitize it. This solution is coated on a silicon substrate with a spinner, and dried for about 15min in the air at <=80 deg.C. The obtained photoreceptor is exposed to electron beams to form a latent pattern, and developed with an aqueous tetramethylammonium hydroxide solution, or the like. The unexposed area is rapidly dissolved off, but th exposed area does not swell, and a pattern is formed with high precision and high sensitivity. |
