| 摘要 |
PURPOSE:To establish perfect contact as necessary between wirings by a method wherein a wiring layer expected to establish contact is made contact through conductive layer or caused to directly contact the conductive layer and the surface of an insulating substrate while an interlayer insulating layer larger than a cross is applied where contact is not to be made. CONSTITUTION:An Si layer is formed on sapphire substrate 11 and the Si layer is provided with conductive layers 121'-125' via impurities diffusion. an SiO2 film 13 is formed to cover the entire surface as an interlayer insulating film. SiO2 films 131-133 are selectively formed by etching at and in the vicinity of locations where a cross is expected to be made with an Al wiring and yet no contact is expected to be made between the two. Next, the entire surface undergoes Al vapor plating and then the plate surface is etched to form Al wirings 151-153. The entire surface of a cross taking part in the establishment of contact between the diffused wiring layers 121'-125' and Al wirings, contact resistance is low and poor connection is prevented. |
