| 摘要 |
PURPOSE:To prevent electromigration caused disconnection by a method wherein belts of conductive films of different resistance are piled upon one another and the belt with the lowest resistance is separated into several small parts by slits. CONSTITUTION:A P type duffused layer 2 is formed on an N type Si substrate 1. The layer 2 is covered with an oxide film 3 provided with a window for establishing contact with the diffused layer 3. Through the window, a TiW film 4 difficult to effect electromigration in spite of high layer resistance is sandwiched between an Al film 5 in the form of a belt including a bonding pad 6 apt to effect electromigration in spite of its low layer resistance and the oxide film 3. The Al film 5 is separated into several parts by slits 7. The slits 7 cause a current to flow through parts of higher resistance but there is but a little increase in resistance, and migration is prevented. |
