| 摘要 |
PURPOSE:To reduce resistance and attain a high speed operation without any damage on a gate electrode by a method wherein source and drain regions are formed by self-alignment method using an Al-gate electrode as a mask, and these regions are annealed by irradiation of a laser light. CONSTITUTION:On a p type Si substrate 1 which contains a field insulation film 2 and a gate insulation film 3, an Al-gate electrode 4 is formed, and by using it as a mask, source and drain regions 5, 6 are formed. By irradiation of a laser light, annealing of source and drain regions 5, 6 is performed. Because the reflection factor of Al is high, annealing can be done without any temperature rise on the Al-gate electrode in spite of irradiation of laser light. By this method an Al-gate electrode with a low resistance can be fabricated. |
