| 摘要 |
PURPOSE:To obtain low leakage currents while improving the performance of an element by forming a device active region to the non-defect layer of the surface of a silicon substrate. CONSTITUTION:A poly Si film 58 is shaped on the back of the Si crystal substrate 51 within the range of 200-1,000nm through a CVD method utilizing the pyrolysis of SH4, a nitride film 59 having internally tensile stress is deposited on the poly Si film on the back of the substrate 51 within the range of 50-250nm through a CVD method through heat treatment for approximately one hour at 1,100 deg.C in Ar, and the substrate is warped so that the surface side is convexed. When the whole is thermally treated for approximately one hour in the wet O2 of 1,100 deg.C, the generation of defects is concentrated at a bulk section except a section near the surface, and a non-defect region is formed in the vicinity of the surface. Accordingly, the semiconductor device formed by the Si substrate in which the defects are concentrated at the section except the section near the surface shaping the active region is obtained. |
