| 摘要 |
PURPOSE:To obtain a good laser by a method wherein on an exposed region of a substrate on which a mesa stripe is selectively provided, the first polycrystalline layer is formed, and subsequently all over it the second layer having a same conductive type as the substrate, the third layer with a small gap, the fourth layer having the reversely conductive type and the fifth layer are sequentially laminated. CONSTITUTION:A mesa stripe 11 is formed by etching on an N type GaAs substrate 10. On a main plane except the mesa stripe region on the substrate, the first polycrystalline layer 12 consisting of Ga.Al.As and having a same value of the thickness as that of the stripe is formed. Over this surface the second layer 13 which is N type, the third layer 14 which is undoped or N type, the fourth layer 15 which is P type and the fifth layer of P type GaAs are sequentially laminated. Among layers grown on the mesa stripe a single crystal layer 17 that is a light emitting layer, among layers grown on the first layer 12 a polycrystalline layer 18 and the third layer 14 are turned into active layers. By this method the single crystal layer 17 and the polycrystalline layer 18 which correspond to the light emitting layer and the buried layer are formed simultaneously, and a laser can be fabricated with improved yield. |
