| 摘要 |
PURPOSE:To reduce unevenness of the surface, and to make coverage of wiring favorable in a semiconductor device by a method wherein after an Si oxide film on a semiconductor substrate formed with source and drain regions is removed, a low temperature thermal oxide film and a CVD oxide film are formed on the surface. CONSTITUTION:After the Si oxide film on an N type Si substrate 1 formed with a P well 2, N type diffusion layers 4, 7, and P type diffusion layers 5, 6 are removed completely, the thermal oxide film of 0.1-0.2mum thickness, the CVD oxide film of 0.5-1.0mum thickness, and a PSG film are formed on the surface in the wet O2 atmosphere. Then the oxide films at the parts to constitute the gate regions are removed, gate oxide films 8 are made to grow, and contact holes are formed. Accordingly flattening of the surface is enabled, and coverage of wiring at the step parts becomes favorable. |
