| 摘要 |
PURPOSE:To easily manufacture a semiconductor device with high breakdown voltage and a low leak current by providing the third groove over and shallower than the first and the second layers. CONSTITUTION:In manufacture of a diode, the first 2 and the scond 3 of p type diffusion layers are formed on an n type semiconductor substrate 1. Then the first groove 4 shallower than the first and the second layers is formed. The second groove 7 is formed by etching shallower than the diffusion depth of and over the first and the second layers 2, 3. A glass layer 5 deposited on the first groove 4 and the second groove 7 removes defects on the main surface of the semiconductor substrate by etching which increases breakdown voltage and decreases a leak current. The depositing method of glass is also made easy. |
