| 摘要 |
PURPOSE:To emit light created at a semiconductor layer efficiently, by making transparent substrate and first electrode for a light-emitting semiconductor device which provides a light-emitting semiconductor layer on the first electrode on a substrate and the second electrode on it. CONSTITUTION:A transparent insulator 1 made of glass, ceramics, plastics, and the like is coated with tin oxide, indium oxide, antimony oxide, and the like by vacuum evaporation or gas-phase growth. A transparent electrode 20 is formed by etching selectively in an appropriate shape. Next, silane, silicon quadfluoride and other fluoride gas are dissolved by glow discharge. Nonsingle crystal semiconductor layers 11, 12, 15, 14, 13 to make a light-emitting semiconductor are formed continuously in the same reaction furnace. Next, a light-emitting semiconductor is left on the transparent electrode 20 and other parts are removed by etching. An insulator 19 of nitride protects the surrounding of the light-emitting semiconductor. Finally an electrode 18 is attached, a wiring 33 is formed as necessary, and the light-emitting element is completed. |
