| 摘要 |
PURPOSE:To obtain a dry etching device with a larger selectivity preventing deterioration and degradation of resist, by providing a test piece stage having a larger gap than the mean free path of an electron. CONSTITUTION:A glow discharge of etching gas led in through a gas inlet 10 is generated by high frequency power 11 after opening a valve 9 of a vacuum partition and evacuating the inside of a reactor vessel 4. A voltage is created on a cathod 5 and electro-magnetic fields crossing each other are generated in the vicinity of the gap 3 by a electro-magnetic field generated at the gap 3 and an electric field determined by direct current bias and a high frequency power. Electrons in the vicinity of the gap move in the direction of EXB under the influence of a frift electric field and are trapped in a drift orbit near the gap. Ionizing effects in this vicinity greatly increases compared to the periphery thus facilitating a high speed etching. |
