| 摘要 |
PURPOSE:To improve wet resistivity by completely covering the surface of a CVDPSG film with a multi-crystal silicon film and an oxide silicon film formed by oxiding the multi-crystal silicon film. CONSTITUTION:To obtain a smooth surface, the entire surface of a CVDPSG film 17 is covered completely with an oxide silicon film 20 except for an opening which is covered by multi-crystal silicon regions 18a, 18b and 18c that connect to the oxide silicon film 20 without gaps. Electrical connectors to a source and drain diffusion layers 14a, 14b and a wiring layer 16 of the multi-crystal silicon are taken out through the opening of the CVDPSG film 17 to the surface of the device and necessary connections are made by a metal witing layers 19a, 19b. This prevents the CVDPSG film 17 from being exposed to water thus checking corrosio of the metal wiring layers 19a, 19b. |
