| 摘要 |
PURPOSE:To provide with good adhesion between metallic silicide and a semiconductor wafer by causing reaction between excess metal in metallic silicide and a semiconductor wafer as a result of heat treatment made after forming metallic silicide having higher metal content. CONSTITUTION:After a field oxide coating 2-3 is formed on a p type silicon substrate 2-1, n<+> group t2-2C is forned by ion implantation of arsenic, and evaporation of molybdenum silicide t2-4 of molybdenum being about 63 to 90% is made to it, and then heat treatment is carried out to form a diode. This diode is capable of actuating at high speed due to lower resistance because of interconnection layer for electrodes being MoSi2 2-5. In addition to this, adhesion is improved for the diode to be free from peeling or cracking after heat treatment because reaction can take place between excess Mo and the n<+> layer by heat treatment as compared with MoSi2. |
