| 摘要 |
PURPOSE:To make possible fine etching of a film preventing fluctuation of the thickness of and damages to a resist due to surface level defference of a substrate, by adopting the etching back technique. CONSTITUTION:A silicon nitride film 19 is formed on an aluminum film 18 having level difference and after etching off a certain thickness by reactive ion etching by mixed gas of H2 and CF4 a needed mask pattern is formed by coating a resist 20 on the silicon nitride film 19 and exposing to a light and by developing. This method prevents fluctuation of the thickness of resist film as well as the fluctuation of pattern size. Moremover, the use of the remaining portion of the silicon nitride film 19 as a mask at the time of etching the aluminum 18, prevents deterioration of etching accuracy due to the damages or defects on the resist. |
