| 摘要 |
PURPOSE:To form thermal nitride or thermal oxide insulation films with improved property of the interface between compound semiconductor crystal and the insulation film, by thermal nitriding or thermal oxiding the surface of the crystal while irradiated by light. CONSTITUTION:In thermal nitriding in the NH3 gas atmosphere, or thermal oxiding in the oxygen atmosphere a compound semiconductor snch as InP, the surface of the crystal to be treated is irradiated with a light having larger energy than prohibiting band energy of the crystal to make electron density on the surface of the crystal higher than 10<18>/cm<3>. For instance, NH3 gas is poured in through a gas inlet. InP crystal 3 is placed on a quartz support 2. it is then irradiated with a light from a light source 4 through an opening made on an electric furnace 1. In nitriding by InP, irradiation of the light of 200W/cm<2> at 500 deg.C increases the growth rate 1.5 times but on the other hand decreases interface order density by one digit. |
