| 摘要 |
PURPOSE:To improve reliability preventing a break of wiring metal by forming a tapered wiring pattern. CONSTITUTION:A wiring pattern 32 is formed by etching a resist coated on an SiO2 film 36 that serves as a spacer on substrate 11. Then an Al film 33 of the first metal is deposited by the electron beam evaporation method. The first layer metal wiring 33 that is obtained by removing the resist 32 is a belt shaped wiring having a tapered side. Finally an SiO2 film 34 is deposited to form over it a vertically crossed wiring 35. This method eliminates a break of vertically crossed wiring metal and making thickness of the wiring metal uniform in the direction of wiring thus improving the reliability. |
