| 摘要 |
PURPOSE:To incorporate a metal-semiconductor junction diode having stable work relationship regardless of heat treatment, etc. by positioning a barrier metal layer consisting of a metal nitride between a metal layer contacting with a semiconductor layer and a wiring metal. CONSTITUTION:An insulating film 2 on a region functioning as the base electrode of an N-P-N transistor TR formed onto an N type epitaxial substrate 1 and the anode electrode of the metal-semiconductor junction diode is removed, and platinum silicide 9 is shaped to opening sections 6a-8a. The barrier metal layers 10-12 made of Ti are formed so as to each coat the opening sections 6a-8a, and at least upper one part of the total thickness is changed into TiN. Al Wiring 13 and bonding pads are further connected onto the layers 10-12. Accordingly, the metal-semiconductor junction diode having stable work relationship in the same extent as the case when using Ti/W is obtained because Ti- TiN is employed as a barrier metal. The diode can be acquired by using a vacuum evaporating device normally employed. |
