| 摘要 |
PURPOSE:To obtain a circuit, which is proper to integration and can accurately measure electrical characteristics, by inputting data signals and data control signals to the gate circuit of two input and one output and outputting the output through a CMOS inverter circuit. CONSTITUTION:An output circuit is formed in such a manner that a NOR circuit 12 or NAND circuit 22 of two input and one output is connected to the inverter circuit 11 consisting of an N-FET Q1 and a P-FET Q2. When the line currents IDD of the inverter 11 are measured by the circuit to which the NOR circuit 12 is connected, the data signals D are inputted as one input and high (grounding) level CUT (H) as the control signals as the other input, the signals D are interrupted, and the output of the circuit D is kept at a low (a negative power supply) level. Accordingly, the Q2 is brought to an on condition, an output terminal 3 is kept at a high level, effects by the charge and discharge of load capacity, etc. can be removed, and the IDD can be measured accurately. When using the circuit 22, since a low level is inputted as one input and output is brought to a high level, the output terminal 3 is kept at a low level, and the IDD can accurately be measured similarly. |
