| 摘要 |
PURPOSE:To obtain the metal silicide layer of uniform quality having no effect in the atmosphere of heat treatment by a method wherein the required metal layer, which will be eutectically alloyed with an Si region, is formed on the Si region, or a metal silicide layer is attached on the Si region using CVD method, and a heat treatment is performed while the above is covered by an SiO2 film using CVD. CONSTITUTION:A film 2 such as Ta and the like, with which a eutectic alloy will be formed with Si, is coated in the approximate thickness of 1,000Angstrom on the surface of a single crystal Si substrate 1, and an SiO2 film 3 of 1-2mum in thickness is grown on the film 2 using the CVD method. Then, after a heat treatment has been performed in ordinary N2 gas atmosphere at the temperature range of 700-1,000 deg.C for thirty minutes, the film 3 is removed by exfoliation. Thus, Ta and Si are reacted with each other and a Ta-Si layer is formed on the surface of the substrate 1, but as the SiO2 film is grown by a low temperature plasma, the Ta is not degenerated, and also it is not oxidized when a heat treatment is performed, thereby enabling to obtain the eutectic alloy with a perfect mirror face. As for the metal, W, Mo, Pt and the like may be used as the metal besides Ta. |
