| 摘要 |
PURPOSE:To implant extrinsic ions uniformly in the whole surface of an wafer by applying sweep voltages with a continuously changing frequency between X- axis deflection electrodes and/or Y-axis deflection electrodes. CONSTITUTION:X-axis sweeep voltages 24 with the first frequency f1 generated by a generator 21 are applied to X-axis deflection electrodes 2X. Y-axis sweep voltages 25 generated by a generator 22 are applied to Y-axis deflection electrodes 2Y. Said Y-axis deflection voltages 25 are voltage waves, with the second frequency f2, frequecy modulated by a modulating frequecy f0 which is generated by a modulation frequency oscillator 23. An ion beam is swept on the whole surface of the wafer by the deflection electrode 2X, 2Y. |
