发明名称 MANUFACTURE OF POLYCRYSTALLINE SILICON SEMICONDUCTOR
摘要 PURPOSE:To prevent the generation of cracks on a polycrystalline silicon lump by a method wherein silicon fused liquid is solidified by cooling in the mold made of nitride silicon, the inner surface of which was sandblasted. CONSTITUTION:Silicon fused liquid and wet-resisting nitride silicon are used as the material for the mold 1 which holds a polycrystalline silicon lump 3, the inner surface of the mold is sandblasted, silicon material is placed in the mold, fused by heating at the temperature above the fusing point of silicon, and the above is solidified by cooling. Accordingly, no stress is applied to the polycrystalline silicon lump when it is cooled, and the generation of crystal defects is suppressed, thereby enabling to use the mold any number of times repeatedly.
申请公布号 JPS57132374(A) 申请公布日期 1982.08.16
申请号 JP19810017420 申请日期 1981.02.10
申请人 KOGYO GIJUTSUIN (JAPAN) 发明人 SHIMURA AKIO
分类号 H01L31/04;C01B33/02;H01L21/18;H01L21/208 主分类号 H01L31/04
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