| 摘要 |
PURPOSE:To prevent the variation of the depletion layer capacitance for the change of signal charge by a method wherein an island type region, containing high density of impurities of the same conductive type is formed on the semiconductor layer located below a transfer electrode whereon a signal charge detecting device will be connected. CONSTITUTION:An N type semiconductor layer 2 is provided on a P type semiconductor substrate 1, and a plurality of transfer electrodes 3a, 3b, ...8b are formed on the layer 2 through the intermediary of an insulating film 10. Then, island-formed P type regions 9a, ...9c are formed on the layer 2 located below transfer electrodes 3a, 4a...8a. DC voltage phiDC is applied to transfer electrodes 3a, 3b, 5, 8a and 8b, and the accumulation and transfer of signal charge are performed by applying a clock pulse phic to transfer electrodes 4a, 4b, 7a and 7b. For the transfer electrode 6 whereon a signal charge detecting device consisted of MOSFET 11, 12 and the like wil be connected, an island-formed N type region 24, containing high density of impurities, is formed in the N type layer 2 located below the electrode 6. |
