| 摘要 |
PURPOSE:To reduce defect introducing possibilities and thereby decrease faulty products by a method wherein the distance from the groove bottom to the opposite surface of the substrate is not more than 100mum in a wafer whose entire thickness is not less than 250mum and the wafer is then subjected to cleavage along the grooves. CONSTITUTION:A wafer including a crystal substrate 2 and an epitaxial layer 3 grown thereon is cleft into a Fabry-Pe rot type reflecting surfae. The entire thickness including the substrate 2, the epitaxially grown layer 3, an electrode 1 on the substrate 2, and an electrode 4 on the layer 3 should be not less than 250mum. The distance between the bottom of the groove 3, running repeatedly throughout the length of the Fabry-Pe rot type resonator starting at the substrate 2 side of the wafer, and the other surface of the substrate 2 should be not more than 100mum. Completing the work, cleavage is provided along the grooves C. |
