| 摘要 |
PURPOSE:To enable to increase the circuit integration, by providing a transfer electrode for charge storage with photo sensing picture elements, giving a row selection function to this transparent electrode and enabling to control a potential barrier region. CONSTITUTION:When a high level voltage V1 is applied to a transparent electrode 44 and a low level voltage V2 to a transfer electrode 36, a signal charge Qs1 is stored in a potential well Vs under a n type semiconductor region 33b. Next, when the voltage N1 is applied to the electrode 44 and a voltage V3 of a higher level than that of the voltage V2 is applied to the electrode 36, the potential well of a potential barrier region 54 is deeper as V7, and a signal charge Qs2 is stored in the region 33b. When a level voltage V0 is given to the electrode 44 and the voltage V2 is applied to the electrode 36, a signal charge Qs4 is transferred to a transfer channel 48. The charge Qs4 transferred to the channel 48 is immediately transferred to the direction of transfer channel and stored under the electrode where the voltage V3 is applied. Next, when the voltage V0 is applied to the electrode 44 and the voltage V3 to the electrode 36, a signal charge Qs5 is all transferred to the channel 48. |
