| 摘要 |
PURPOSE:To realize a smooth connection among buried optical waveguide paths of different structures, by varying the stripe width of a stripe mesa structure in a tapered shape and toward the waveguide direction and then varying the layer thickness of the waveguide region in a tapered shape and toward the waveguide direction. CONSTITUTION:The 1st and 2nd stripe mesa structures 11 and 13 having different stripe widths are formed on a semidoncutor substrate 1 along with a mesa structure 12 having the width of stripe varying in tapered shape. Then the 1st optical waveguide layer 2 which is epitaxially-grown on the mesa structure, the 2nd optical wavegude layers 3a and 3b which are selectively epitaxially-grown only at the areas corresponding to the structures 12 and 13 on the layer 2 plus a cladding layer 4 consisting of InP are formed on the substrate 1 having mesa structures 11-13. The thickness of the layer 3a varies from zero and in a tapered shape. As a result, the buried type optical waveguide paths of different structures can be connected to each other in an easy and simple way. |
