| 摘要 |
PURPOSE:To reduce the number of control terminals by a method wherein a thyristor gate and a transistor emitter are connected in the semiconductor element in which a GTO thyristor and a transistor are joined together. CONSTITUTION:The GTO thyristor is consisted of a P type semiconductor layer 11, an N type semiconductor 12, a P type semiconductor layer 13 and an N type semiconductor layer 14a, and the transistor is consisted of an N type semiconductor layer 12, a P type semiconductor layer 13 and an N type semiconductor layer 14b. An anode is picked out in common with a collector by an electrode 21, a cathode is picked out in common with a base by an electrode 23, and then a gate and an emitter are connected using a wiring W. By the help of the control device which will be connected between the cathode and the gate (base and emitter), a base forward direction pulse is given to the transistor, and the thyristor is distinguished. |
