SHAPING METHOD OF RESIST PATTERN

摘要

PURPOSE:To obtain a resist pattern required for the high-accuracy processing of an underlying substrate by a method wherein plasma treatment using mixed gas of inert gas and hydrocarbon gas is applied to the resist pattern formed on a substrate and the sectional shape of the pattern is shaped. CONSTITUTION:Mixed gas of Ar 90%, CH4 10% is controlled by a valve while gas in a vacuum container is exhausted by a pump and the mixed gas is flowed in the container so that the gas pressure in the container may be 0.1 torr. In such a device, a steep-gradient electric field, self-bias voltage are generated around an electrode 6 by the difference between the mobility of ions and that of electrons in plasma gas and the ions in mixed gas plasma are accelerated by the inclination of the electric field to collide with a resist pattern. The pattern of polymethyl methacrylate having a development residual of 2,000Angstrom is used as a resist pattern sample and treatment has been done for 40min under the above condition.