| 摘要 |
PURPOSE:To increase the quantity of the generation of secondary electrons emitted, and to improve the S/N by forming an observing section, to which electron rays are irradiated and which emits the secondary electrons as signals, in a shape that has the convex section or concave section of a semisphere. CONSTITUTION:A thick field oxide film 2 is shaped onto a substrate 1, and a gate electrode 6a is formed onto the film 2. The observing section 8, which takes the shape having the semispherical convex section and consists of a metal such as aluminum, is formed onto the gate electrode 6a while being projected from the surface of an insulating film 7. Accordingly, when the electron rays are irradiated to the observing section 8 from a scanning type electron microscope (SEM) the surface of the observing section 8 is sloped in the direction that the electron rays are projected even when the semiconductor device is arranged in any way as it is left as it is horizontal because the observing section 8 takes the shape having the semispherical convex section. Consequently, a collector 9 of the SEM can focus the much quantity of the generation of the secondary electrons emitted from the observing section 8. |
