| 摘要 |
PURPOSE:To obtain a positive type photosensitive composition which sensitizes by deep UV and is capable of forming of a fine resist pattern and has large allowability at the time of forming pattern by forming the titled composition from a polymer contg. a specific structural unit. CONSTITUTION:The titled composition contains the structural unit shown by formula I wherein R1-R4 may be the same or different with each other, and are each hydrogen or halogen atom, or vinyl, allyl, 1-10C an unsubstd. or a substd. alkyl group, 1-10C alkoxy group, 1-14C an unsubstd. or a substd. aryl, aryloxy, nitro, hydroxy or mercaphto group, X is alkyl or an aromatic group, etc., Y is a substituent group. Thus, the positive type photosensitive composition which sensitizes by the deep UV, and is capable of forming of the fine resist pattern and has the large allowability at the time of forming the pattern and is suitable to use for the photoetching process of a semiconductor device, etc., is obtd. |
