| 摘要 |
PURPOSE:To obtain the MIS type device having the high efficiency of photoelectric conversion by thinly forming a reverse conduction type layer onto one conduction type semiconductor and shaping an opposite electode to the surface through an insulating or semi-insulating film with thickness by which currents can be flowed. CONSTITUTION:The N type layer 7 of the depth of 0.5mum or less (preferably, 20-500Angstrom ) is formed to one main surface of a substrate such as the P type semiconductor substrate 1, and the layer 7 is coated with a film such as a Si nitride film 3 with 10-30Angstrom thickness. Electrodes 4, 5 are formed onto the film 3 in pectinated shapes, and a reflection preventive film 10 of an ITO, etc. is molded coating the electrode 5 (or between the electrode 5 and the film 3). The back electrode 2 is shaped to the other main surface of the substrate 1 through the P<+> layer 11, and voltage having polarity generating a depletion layer 6 in the substrate is applied between the electrodes 2, 5. Accordingly, the efficiency of photoelectric conversion can be improved because the reverse conduction type layer 7 is thinned and shaped in floating structure and a junction short-circuit due to the electrode 5 does not occur. |
