发明名称 PHOTO MASK
摘要 PURPOSE:To prevent a generation of photo resist dust by using in the outer circumference part of a semiconductor substrate a photo mask having a pattern in the manner as leaving no photo resist available for manufacture of a semiconductor device. CONSTITUTION:The area of a photo mask pattern face is made a little smaller than the area of a semiconductor substrate 1 to transcriber a mask pattern 5. However, from the area slightly inside of the external circumference of the substrate 1 to the photo mask face which is wider than the external circumference, a light shielding pattern is formed when a negative photo resist pattern is to be obtained while a light transmitting pattern is formed when a positive photo resist pattern is to be obtained. According to such a constitution, after the photo resist pattern has been developed, the resist would not be left in the external circumference of the substrate. Therefore, if the end face at the external circumference of the semiconductor substrate may make contact with a semiconductor manufacturing equipment and a semiconductor substrate housing cassette or the like, no dust would be completely generated.
申请公布号 JPS57130421(A) 申请公布日期 1982.08.12
申请号 JP19810015491 申请日期 1981.02.04
申请人 NIPPON DENKI KK 发明人 YADOIWA YOSHIAKI
分类号 G03F1/00;G03F1/54;H01L21/027 主分类号 G03F1/00
代理机构 代理人
主权项
地址