| 摘要 |
PURPOSE:To reduce the thermal contact resistance between an insulating plate and a heat radiating fin when the fin is to be adhered on the back of the insulating plate fixed with a semiconductor substrate and metal terminals to be connected to electrodes thereof on the surface by a method wherein the back of the insulating plate is scraped off slightly, a metalized layer is adhered thereon, and the metalized layer is made to come in contact with the fin. CONSTITUTION:An insulating plate 2 provided with a semiconductor substrate and metal terminals to be connected thereto interposing plural metalized pattern layers 3 between them on the surface is surrounded with a metal plate 1, and the heat radiating fin 8 is fixed on the back thereof to constitute an insulating semiconductor device. At this constitution, the back of the insulating plate 2 is scraped off slightly, and a metalized layer 31 is adhered on the scraped part arranging the face thereof with the back of the metal plate 1 in face. Accordingly the metalized layer 31 is made to be interposed between the insulating plate 2 and the fin 8, and thermal contact resistance between them is reduced to enhance heat radiating efficiency. |
