| 摘要 |
PURPOSE:To suppress generation of a hillock of wiring and to avoid disconnection at the through-hole part when a multilayer wiring of semiconductor device is to be formed by a method wherein a part of a lower layer metal wiring is covered with a dielectric film, and charged corpuscular rays or a laser beam is irradiated in an oxidizing atmosphere to oxidize the metal surface of the exposed part of wiring. CONSTITUTION:An oxide film 40 is made to be generated on an Si substrate 1, the Al wiring 81 of the prescribed pattern to constitute the lower layer wiring is formed thereon, and an SiO2 film or a P type SiN film 41 is provided on the part 11 to constitute a through-hole. Then the laser beam 10 having as much power to melt the surface layer part of the wiring 81 is irradiated on the whole surface exposing the surface in the oxygen atmosphere to make an Al<2>O3 film 94 to be generated on the surface layer part. After then, a dielectric film 41 covering the through-hole is removed, and an Al wiring 82 of the upper layer to come in contact with the wiring 81 through the through-hole part 11 is adhered extending over the films 94, 40. |
