发明名称 FULL AUTOMATIC ION IMPLANTATION DEVICE
摘要 PURPOSE:To implant ions automatically by using a computer for operations such as generation of plasma, extraction of an ion beam, mass analysis of ions, setting of acceleration voltage, and ion implantation in a specimen. CONSTITUTION:An acceleration power supply 50 is set at a predetermined value by a control computer 20 through a beam line controller 43. After mass analysis, an ion beam is accelerated to a predetermined value by an accelerator 49, is emitted into a beam line section 40, and is focused to an optimum condition by a lens electrode 41. Then, the ion beam is scanned electrostatically by a scanner 42 controlled by the control computer 20. The ion beam injected into an end station 44 is illuminated on an inserted specimen 46, and the ion implantation is continued until a predetermined quantity of implantation is reached. Setting of the implantation quantity and monitoring of the current value are conducted through measurement by a dosimeter 48 and control by the control computer 20.
申请公布号 JPS57130358(A) 申请公布日期 1982.08.12
申请号 JP19810015018 申请日期 1981.02.05
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 HARADA UKOU;MIYAKE MASAYASU;EGAMI YOUICHI
分类号 B01J19/08;H01J37/08;H01J37/248;H01J37/317;H01L21/265 主分类号 B01J19/08
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